650V Rapid 1 and Rapid 2
Ultra- and Hyper-Fast Si Diodes Offering Outstanding Performance
Infineon’s new Rapid 1 and Rapid 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes. The new hyper- and ultra-fast diode families offer outstanding efficiency and reliability and perfectly balance cost and performance. The additional 50V provide higher reliability.
650V Rapid 1 Diode
Infineon's Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI emissions to a minimum. The devices are perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances such as Air Conditioners and Washing Machines.
650V Rapid 2 Diode
The Rapid 2 diode family is designed for applications switching between 40kHz and 100kHz by offering low reverse recovery charge (Q rr) and time (t rr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency.
Common Cathode and Dual Anode Rapid 1 and Rapid 2 Diodes
Rapid diode, with ultra-thin wafer technology to achieve very low and temperature stable forward voltage, now comes in a common cathode and dual anode configuration on a TO-247 and TO-220 package. Up to 80A/650V in common cathode configuration and a 75A/650V in dual anode variant allows design optimization for more compact dimensions, easier assembly and consequently lower costs.
|Rapid Diode with optimized V F||Applications|
|Rapid 2 Diode with optimized Q rr:V F||Applications|
|Topologies Common Cathode diode:|