IDH12G65C6
概要
Unparalleled efficiency and price performance
The CoolSiC™ Schottky diode 650 V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).
特長
- The lowest V F: 1.25V
- Best-in-class figure of merit (Q c x V F)
- No reverse recovery charge
- Temperature independent switching behavior
- High dv/dt ruggedness
- Optimized thermal behavior
利点
- Improved system efficiency over all load conditions
- Increased system power density
- Reduced cooling requirements and increased system reliability
- Enables extremely fast switching
- Easy and effective match with CoolMOS™ 7 families
- Optimal price performance
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