FM22L16-55-TG Industrial-grade 4096kBit Parallel FRAM with 55ns speed, ensuring reliable performance in a wide temperature range of -40°C to 85°C.

概要

Experience over 151 years of data retention with the FM22L16 256K × 16 nonvolatile memory. Its fast write timing, high endurance, and nonvolatile nature eliminate reliability concerns, making it an ideal drop-in replacement for standard SRAM, ensuring superior performance in applications requiring frequent or rapid writes.

特長

  • Configurable as 512K × 8 using UB and LB
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention
  • NoDelay™ writes
  • Page mode operation to 25 ns cycle time
  • Advanced high-reliability ferroelectric process
  • SRAM compatible
  • 44-pin thin small outline package (TSOP) Type II
  • Restriction of hazardous substances (RoHS) compliant

利点

  • Drop-in replacement for standard SRAM
  • Flexibility in triggering read/write cycles
  • Nonvolatile nature due to ferroelectric process
  • Ideal for frequent or rapid writes
  • Low voltage monitor for data protection
  • Software-controlled write protection
  • Memory array divided into individually write-protected blocks
サポート