EVAL-1ED020I12F2-DB

概要

Isolated gate driver daughter board using 1ED020I12-F2 to evaluate 1200 V CoolSiC™ MOSFET

The EVAL-1ED020I12F2-DB is part of the CoolSiC™ evaluation platform second revision in a high-side / low-side configuration with two gate driver ICs (1ED020I12-F2). This platform is developed to show the optimal driving of the CoolSiC™ MOSFETs or other power switches like IGBT and MOSFET in TO247 3-pin or 4-pin package. To achieve this target the design was split in two boards, one motherboard EVAL-PS-DP-MAIN and one daughter board, EVAL-1ED020I12F2-DB. The modular approach enables future expansion of the platform with additional gate driver cards. The switch type can be freely chosen.
EVAL-1ED020I12F2-DB contains the EiceDRIVER™ Enhanced isolated driver 1ED020I12-F2 with an integrated active Miller clamp preventing parasitic turn-on and DESAT function to protect against damage through short circuit, best suited for double pulse testing and evaluation.

特長

  • Single channel isolated gate driver IC (1ED-F2)
  • For 600 V/1200 V IGBTs, MOSFETs, SiC MOSFETs, discrete and modules
  • 2 A rail-to-rail typical output current
  • Precise DESAT protection, VCEsat detection
  • Active Miller Clamp
  • Active shutdown and Short circuit clamping
  • 28 V absolute Max. output supply voltage
  • 170/165 ns typ. propagation delay
  • 12/11 V output UVLO
  • ≥ 100 kV/µs CMTI

利点

  • Tight propagation-delay matching: tolerance improves application robustness without variations due to aging, current, and temperature
  • Precise, integrated filters reduce propagation-delay variation over a wide range of operating conditions; reduce the need of external filters
  • Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
  • Wide body package with 8 mm creepage distance
  • Immunity against negative and positive transients, increases reliability of the end product
  • Low power losses for switching frequencies into MHz range
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