The BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.
• Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe:C technology
• Unique combination of high-end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness
• High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
• High transition frequency fT = 60 GHz enables very low noise figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
• Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA
• Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V (3.3 V, 3.6 V requires corresponding collector resistor)
• Low power consumption, ideal for mobile applications
• Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads
• Qualification report according to AEC-Q101 available
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