650 V, 0.7 A High-side and Low-side Gate Driver IC 2ED21064S06J with Integrated Bootstrap Diode based on SOI Technology

Open online SPICE simulator circuit link: power_650VDC_high_side_low_side_gate_driver_SOI_2ED21064S06J.TSC

650 V, 0.7 A High-side and Low-side Gate Driver 2ED21064S06J with
Integrated Bootstrap Diode based on SOI Technology

650 V high and low side high speed power MOSFET and IGBT gate driver with typical 0.29 source current,
and 0.7 sink current in DSO-14 package. The smaller DSO-8 package version is also
available: 2ED2106S06F.

Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative
transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic
latch up at all temperature and voltage conditions.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Under-voltage lockout
- Bootstrap diode