650 V Half Bridge Gate Driver IC EiceDRIVER™ 2ED2104S06F with integrated bootstrap diode

Open online SPICE simulator circuit link: power_650VDC_half_bridge_gate_driver_2ED2104S06F.TSC

650 V Half Bridge Gate Driver IC EiceDRIVER™ 2ED2104S06F with integrated
bootstrap diode

The 2ED2104S06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side
referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise
immunity with capability to maintain operational logic at negative voltages of up to - 11 VDC on VS pin (VCC = 15 V)
on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic
latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS
or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC
MOSFET or IGBT in the high side configuration, which operate up to 650 V.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout
- Bootstrap diode