650 V Half Bridge Gate Driver IC EiceDRIVER™ 2ED2103S06F with integrated bootstrap diode

Open online SPICE simulator circuit link: power_650VDC_half_bridge_gate_driver_2ED2103S06F.TSC

650 V Half Bridge Gate Driver IC EiceDRIVER™ 2ED2103S06F with
integrated bootstrap diode

650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents
in DSO-8 package for driving power MOSFETs and IGBTs. Based on our SOI-technology,
the 2ED2103S06F has excellent ruggedness and noise immunity against negative transient
voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic
latch up can occur over all temperature and voltage conditions.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Undervoltage lockout
- Bootstrap diode