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650 V Half-bridge Gate Driver IC 2ED28073J06F with Integrated Bootstrap Diode based on SOI Technology

Open online SPICE simulator circuit link: power_650VDC_half-bridge_gate_driver_SOI_2ED28073J06F.TSC

650 V Half-bridge Gate Driver 2ED28073J06F with
Integrated Bootstrap Diode based on SOI Technology

600 V half-bridge gate driver IC with integrated bootstrap diode with typical 0.02 A source and 0.08 A sink currents
in DSO-8 package for driving MOSFETs including fast body diode CoolMOS PFD7 super junction MOSFETs
and IGBTs.

The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side
referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output
drivers feature a low di/dt output stage optimized to drive CoolMOS™ PFD7 in motor drive applications. The floating
channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates
up to 600 V.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout
- Bootstrap diode

Product Info: IPP65R225C7
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Product Info: 2ED28073J06F