600 V Three Phase Gate Driver IC EiceDRIVER™ 6EDL04I06NC bare die with integrated bootstrap diode, over current protection, enable and fault reporting

Open online SPICE simulator circuit link: power_600VDC_three_phase_gate_driver_6EDL04I06NC.TSC

600 V Three Phase Gate Driver IC EiceDRIVER™ 6EDL04I06NC bare die with integrated
bootstrap diode, over current protection, enable and fault reporting

The device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or
IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology
there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the
device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions.

The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down
to 3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an overcurrent
detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin
ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down off all six switches. An
error signal is provided at the FAULT open drain output pin. The blocking time after over-current can be
adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 µA. Therefore,
the resistor RRCIN is optional. The typical output current can be given with 165 mA for pull-up and 375 mA for pull
down. Because of system safety reasons a 310 ns interlocking time has been realised. The function of input EN
can optionally be extended with an over-temperature detection, using an external NTC-resistor (see Fig.1). The
monolithic integrated bootstrap diode structures between pins VCC and VBx can be used for power supply of
the high side.