Infineon Designer powered by TinaCloud

200 V, 1 A High Side and Low Side Gate Driver IC EiceDRIVER™ IRS2011S

Open online SPICE simulator circuit link: power_200VDC_high_side_low_side_gate_driver_IRS2011S.TSC

200 V, 1 A High Side and Low Side Gate Driver IC EiceDRIVER™ IRS2011S

The IRS2011 is a high power, high speed power MOSFET driver with independent high
and low side referenced output channels. Logic inputs are compatible with standard
CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. Propagation delays
are matched to simplify use in high frequency applications. The floating channel can be
used to drive an N-channel power MOSFET in the high side configuration which operates
up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized
monolithic construction.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout

Product Info: IKW40N65F5
Technical Assistance

Other circuits

Gate Driver

Product Info: IRS2011S