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WiMax LNA for 2.3 - 2.7 GHz

Open online SPICE simulator circuit link: rf_BFP740_TR103.tsc

WiMax LNA for 2.3 - 2.7 GHz

- This report presents the measurement results of the LNA using SiGe:C bipolar transistor BFP740
from Infineon technologies with microstrip line emitter as emitter degeneration inductance for the
2.3 - 2.7 GHz WiMax application.

Summary of features:
- High gain ultra low noise RF transistor
- Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more
- Ideal for CDMA and WLAN applications
- Outstanding noise figure F = 0.5 dB at 1.8 GHz, outstanding noise figure F = 0.85 dB at 6 GHz
- High maximum stable gain :Gms = 27 dB at 1.8 GHz,
- Gold metallization for extra high reliability
- 150 GHz fT-Silicon Germanium technology
- Pb-free (RoHS compliant) package1)
- Qualified according AEC Q101

Target applications:
As Low Noise Amplifier (LNA) in
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz,
UWB, Bluetooth
- Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier


Product info: BFP740
Application note: TR103
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