EDT3 1200V chips

The increasing demand for energy efficiency, reliability, and compactness in industrial and automotive systems has driven the need for high-performance power semiconductor devices. Our EDT3 1200V Si IGBT and Diodes are designed to meet these market requirements, offering a unique combination of high voltage capability, low losses, and ruggedness.

In the automotive sector, our 1200V Si Bare Dies are particularly suited for electric vehicle charging systems, traction inverters, and other high-power applications, where its high voltage capability and low losses ensure efficient and reliable operation.

The value proposition of our EDT3 1200V Si Bare Dies lies in its ability to provide a high level of performance, reliability, and flexibility, while reducing system complexity and cost. With its optimized design and advanced manufacturing process, this device offers a unique balance of low conduction and switching losses, high short-circuit ruggedness, and excellent thermal performance. This enables system designers to develop more efficient, compact, and reliable systems, while reducing their overall bill of materials and development time.