Global energy demand is poised to skyrocket in the coming years, while at the same time, governments are passing more ambitious emissions targets. Switching to green, renewable energy sources is one important step in reducing emissions, but worldwide adoption relies on the ability to make such systems more efficient, powerful, and reliable.

Infineon’s .XT technology offers a solution. This advanced interconnection technology is used to get more power out of the chip. With our unique techniques and advanced components it is possible to achieve higher power density and robustness, while extending the lifetime of the system.

.XT interconnection technology is enabling the shift to renewable energy. With solutions for both CoolSiC™ MOSFET discretes and IGBT modules, .XT interconnection technology is transforming applications like wind, photovoltaic, EV charging, and industrial drives – paving the way for a greener, more sustainable future.

Diffusion soldering for better performance and reliability

CoolSiC™ MOSFETs with .XT interconnect technology for discrete packages uses a unique diffusion soldering process developed by the company that improves the performance, reliability, and the lifetime of semiconductors, accelerating the adoption of energy-efficient systems and clean energy.

.XT technology eliminates the typical limitations seen through standard soldering processes. Infineon pioneered a diffusion soldering process that establishes a very sound thermal connection from the chip to the heat sink via the package. In combination with CoolSiC™, this can improve a chip's junction-to-case thermal resistance by up to 25 percent, by increasing its thermal dissipation capability by up to 30 percent or lowering operating temperatures up to 15 K. It is also possible to achieve both higher current output and lower operating temperature, which not only improves the system output current capability, but also extends the lifetime of the devices.

Enabling sustainable applications for green energy

These features deliver a critical advantage in applications such as photovoltaics, fast EV charging infrastructure, energy storage systems, and motor drives, where performance can be increased in the same form factor. Such advancements enhance the optimization potential further Silicon Carbide-based designs.

.XT for modules is characterized by improved wire bonding, reliable chip attachment enabled by sintering, and high-reliability system-soldering. These combined improvements of the interconnection eliminate the typical wear-and-tear out mechanisms, like fatigue of the bond wire and soldered chip connection that occur during cycling loads in the applications.

To fulfill application requirements, high voltage modules like the 3.3 kV XHP™ 3 can now support an increased power cycling robustness of a factor greater than 5. Low-voltage modules like the 1.2 kV and 1.7 kV PrimePACK™ or  XHP™ 2 modules can even tolerate cycling loads 40 times higher, even at temperatures 25 K higher compared to standard joining technology. This means that modules can support these increased power cycling loads even at temperatures up to 175 °C.

Thanks to this higher cycling capability, the benefits of .XT interconnection technology are numerous.