BAT24-02LS

Overview

Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height,  small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz

Summary of Features

  • Low inductance LS = 0.2 nH (typical)
  • Low capacitance C = 0.2 pF (typical) at 1 MHz
  • TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint
  • Pb-free (RoHS compliant) and halogen free

Potential Applications

For mixers and detectors in:

  • Radar based systems and modules
Support