Low-Noise Si Transistors up to 5 GHz
All these high performance low-noise wideband amplifiers (LNAs) are based on Silicon Bipolar technology and they apply the SIEGET assembly method in order to achieve best-in-class power gain. Their transition frequency fT of 25 GHz supports applications up to 5 GHz without compromising on ease of use while keeping the prices in this device series low.
The stated gain values G max apply to a frequency of 1.8 GHz. The noise figure NF min has been measured in a test fixture with a noise match at the input; the stated number applies to low frequencies. All OIP3 and OP1dB values have been measured in the 50 Ohm system and can be optimized by choosing an appropriate load impedance.