NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.
Summary of Features:
- For high voltage applications VCE < 12 V
- Maximal power Ptot = 700 mW
- Transition frequency fT = 7.5 GHz
- Noise figure NFmin = 1.3 dB at 900 MHz
- Easy to use Pb-free (RoHS compliant) and halogen-free industry
- standard SOT343 package with visible leads
- GNSS active antenna
- Amplifiers in antenna and telecommunications systems
- Power amplifier for DECT and PCN systems
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