High Power RF LDMOS FET, 25 W, 48 V, 500 – 1400 MHz
Summary of Features:
- Target CW performance 960 MHz, 48 V, combined outputs
- Output power at P 1dB = 25 W
- Gain = 19.8 dB
- Efficiency = 64%
- Capable of handling 10:1VSWR @ 48 V, 20 W CW output power
- Integrated ESD protection
- Human Body Model class 1C (per ANSI/ESDA/JEDC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant
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