High Power RF LDMOS FET, 140 W, 28 V, 2620 – 2690 MHz
Summary of Features:
- Broadband internal matching
- Wide video bandwidth
- Typical pulsed CW performance, 2655 MHz, 28 V (combined outputs)
- Output power at P1dB = 140 W
- Efficiency = 50%
- Gain = 16.5 dB
- Typical single-carrier WCDMA performance, 2655 MHz, 28 V
- Output power = 46 dBm avg
- Gain = 17.5 dB - Efficiency = 30.5%
- Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant
- Package: H-37248-4
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