High Power RF LDMOS FET, 340 W, 30 V, 1930 – 1990 MHz
Summary of Features:
- Broadband input and output matching
- Wide video bandwidth
- Typical single-carrier WCDMA performance at 1990 MHz, 30 V
- Output power = 100 W
- Efficiency = 33%
- Gain = 19 dB - PAR = 7.5 dB @ 0.01% CCDF
- ACPR @ 5 MHz = -35 dBc
- Increased negative gate-source voltage range for improved performance in Doherty amplifiers
- Capable of handling 10:1 VSWR @ 30 V, 340 W (CW) output power
- Integrated ESD protection
- Excellent thermal stability
- Pb-free and RoHS compliant
- Package: H-37275-6/2, earless
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