This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 24 GHz.
Summary of Features:
• Low inductance LS = 0.2 nH
• Low capacitance C = 0.2 pF (typical) at 1 MHz
• TSSLP-2-3 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint
• Pb-free, RoHS compliant and halogen free
For mixer and detectors in:
• Mobile devices
• Modules and embedded systems
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