BAT15-02EL - Infineon Technologies

Overview

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Summary of Features

• Low inductance Ls = 0.4 nH (typical)

• Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz

• TSLP-2-19 package (1 mm x 0.6 mm x 0.31 mm) with a 0402 footprint

• Pb-free, RoHS compliant and halogen-free

Potential Applications

For mixer and detectors in:

• Mobile devices

• Modules and embedded systems