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The  BGA7M1N6 is a front-end low noise amplifier (LNA) for LTE applications in the range from 1805 MHz to 2200 MHz. The LNA provides 12.6 dB gain and 0.9 dB noise figure at 1.8V, 4.4 mA  in the application.The BGA7M1N6 is based upon Infineon Technologies Silicon Germanium technology. Please specify your frequency requirement when you order the board.

Summary of Features:

• Low noise figure in the application
• Low current consumption: 4.4 mA
• Operating frequencies: 2300 - 2690 MHz
• Supply voltage: 1.5 V to 3.3 V
• Digital on/off switch (1V logic high level)
• RF output internally matched to 50 Ω
• Only 1 external SMD component necessary
• 2kV HBM ESD protection (including AI-pin)
• Ultra small leadless and halogen-free TSNP-6-2 package (0.7 x 1.1mm2) with a very low height of 0.4mm

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Product Selection Guide

Title Size Date Version
22.2 MB 21 Feb 2017 00_00
Sales Product Name EVAL BGA7M1N6
Product Status on request
Order online Buy online
Package Name --
Completely lead free
Halogen free
RoHS compliant yes
Packing Size 1
Packing Type CONTAINER

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