This article discusses the advantages and disadvantages of traditional insulated gate bipolar transistors (IGBT) and silicon super-junction (SJ) MOSFETs and introduces two innovative approaches that have recently gained traction in the industry.
By replacing IGBTs and SJ MOSFETs with wide bandgap devices like silicon carbide (SiC) MOSFETs or by using a multilevel topology that employs lower voltage silicon MOSFETs, up to 99% efficiency can be reached.
We detail each approach to help you make the best decision for your solar inverter design needs.