Related product families and design support

Paralleling becomes more of a challenge under switching conditions and more so as frequency increases. When paralleling MOSFETs, it is essential to understand and ensure proper current balance among the MOSFETs, comprehend MOSFET parameters affecting current sharing, conduction losses, switching losses, and the importance of gate threshold voltage on the device temperature.

Infineon’s best-in-class OptiMOS™ LV/MV MOSFETs and CoolMOS™ HV MOSFETs are designed to deliver ultimate performance in combination with highest efficiency and power density. Learn more about our innovative solutions.