
Expert insights

“Our new HybridPACKTM Drive G2 Fusion module underlines Infineon’s innovation leadership in the automotive semiconductor industry,” said Negar Soufi-Amlashi, Senior Vice President & General Manager High Voltage at Infineon's Automotive division. "Addressing the demand for greater e-mobility range, this technological breakthrough smartly combines silicon carbide and silicon. Integrated in a well-introduced module package footprint, it offers a compelling cost-performance ratio over pure silicon carbide modules without adding system complexity for automotive system suppliers and vehicle manufacturers."
Versatility and robustness
The HybridPACKTM Drive G2 Fusion module is an integral part of Infineon's HybridPACKTM Drive power module portfolio. It features up to 220 kW in the 750 V class and ensures high reliability across a wide temperature range from -40 °C to +175 °C. With improved thermal conductivity and the unique properties of Infineon's CoolSiC™ technology, coupled with silicon IGBT EDT3 technology, this module supports both single and dual gate drivers, facilitating ease of re-design from full silicon or SiC inverters to hybrid solutions.
Innovative integration for precision control
Infineon's holistic expertise in SiC MOSFET and silicon IGBT technology, power module packaging, gate drivers, and sensors enables premium products with significant cost savings at the system level. The HybridPACKTM Drive package integrates Swoboda or XENSIV™ Hall sensors, ensuring more precise and efficient motor control.