Key Takeaways
- Gate drivers matches to latest IGBT, SiC MOSFET and Fusion switch technologies
- Developed according to ISO 26262
- No configuration required
- Compact with powerful output stage
- I have seen the new gate drivers uses “SI pin”. Can we simply transfer the designs, which used in older gate driver variants normal Enable/Reset pin features?
- Where is the overvoltage lookout threshold? Can we use nominal 18V gate supply for SiC MOSFET power modules and which nominal voltage needs the new Fusion switches.
Our speakers:
Tomas Reiter is a product definition engineer for automotive high voltage power modules at Infineon. He holds a Dr. Ing. degree in electrical engineering from the Technical University of Munich, Germany. He has more than 20 years of experience in automotive power electronics with more than 15 years in the area of automotive high voltage traction inverter applications.
Matthias Weinmann is a product application engineer for automotive high voltage gate drivers in the xEV traction inverter. Matthias holds a Master’s degree in electrical engineering from FAU Erlangen-Nuremberg. He has more than 10 years of experience in the field of automotive semiconductors and is responsible for the design-in support of a global customer base.