CoolSiC™ Schottky Diode
Improve efficiency and solution costs
Infineon is the world’s first SiC discrete power supplier. Long market presence and experience enable Infineon to deliver highly reliable, industry-leading SiC performance. The differences in material properties between Silicon Carbide and Silicon limit the fabrication of practical Silicon unipolar diodes (Schottky diodes) to a range up to 100 V–150 V, with relatively high on-state resistance and leakage current. In SiC material Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC devices covers 600 V and 650 V to 1200 V Schottky diodes.
System solution for PFC
|CCM PFC Power [W]||CoolMOS™ R DS(on) [mΩ]||CoolSiC™ diodes I F [A]|
|Server||Telecom||Server and telecom|
|500||1 x 90||1 x 190||1 x (4~6)|
|750||1 x 99/2 x 190||2 x 190||1 x (6~8)|
|1200||2 x (70~99)||1 x (8~10)|
|2000||2 x 99||2 x (6~8)/1 x (12~16)|
|2700||3 x (41~80)||2 x (8~10)/1 x (16~20)|
|3000||2 x 65/1 x 19||2 x (8~10)/1 x (16~20)|
- R DS(on) depends on target efficiency level, switching frequency and thermal management
- SiC diode current level depends on switching frequency, current limitation and thermal management
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