Silicon Carbide (SiC)

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Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow creating devices which outperform by far the corresponding Si ones. This way you can reach unattainable efficiency levels in your designs.



CoolSiC™ - Revolution to rely on

Infineon CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary SiC technology with extensive system understanding, best-in-class packaging, and manufacturing excellence, Infineon CoolSiC™ enables you to develop radical new product designs with best system cost-performance ratio.

 


CoolSiC™ MOSFET 1200V

 

New CoolSiC™ Schottky diode 650V G6

CoolSiC™ MOSFET   CoolSiC™ Schottky

The CoolSiC™ MOSFET 1200V is the leading edge solution to bring designs towards new unattainable efficiency- and power density levels. CoolSiC™ MOSFET represents the best solution for solar, UPS and industrial drives applications by combining best performance reliability, safety and ease of use.

 

CoolSiC™ MOSFETs 1200V

 

 

This latest development in the CoolSiC™ diode family is built upon the distinctive characteristics of the G5, providing reliability, quality, and increased efficiency. They are aiming at current and future applications in server and PC power, telecom equipment power and PV inverters.

 

New CoolSiC™ Schottky diodes 650V G6

CoolSiC™ Schottky diodes 650V G5

CoolSiC™ Schottky diodes 1200V G5


CoolSiC™ MOSFET Gate Driver ICs 1200 V

CoolSiC™ MOSFET Gate Driver ICs 1200 V

 

Ultra-fast switching 1200-V power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.

Click here & read more about our SiC MOSFET Gate Driver ICs 1200 V

 

NEW! CoolSiC™ Schottky diode 650V G6



1200V CoolSiC  

 

 

CoolSiC™ schottky diode G5

CoolSiC™ schottky diode 1200V G5 combined with a Si HighSpeed 3 IGBT enables simpler 2-level topologies due to its zero reverse recovery losses. It also delivers 40% lower Si IGBT turn-on losses and reduced EMI. Moreover, an improved thermal performance reduces now the junction temperature by 15% compared to a silicon based solution - increasing system reliability as well the possibility to increase output power in a given form factor. Read more about our CoolSiC™ schottky diodes 1200V G5

 


 

650V CoolSiC  

 

 

CoolSiC™ schottky diode 650V G5

With CoolSiC™ schottky diode G5 Infineon presents a leading edge technology for SiC schottky barrier diodes, delivering market leading efficiency at attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design as well as latest advancements in thin wafer technology. Discover more about CoolSiC™ schottky diode 650V G5


Product image PrimePACKIGBT5.XT  

 

 

PrimePACK™ with IGBT5 and .XT

The innovative technologies IGBT5 and .XT will at first extend the well-known PrimePACK™ portfolio. With these new technologies the power density can be increased by 25% or the life time can be extended by a factor 10. More about our PrimePACK TM Modules with IGBT5 and .XT


Product image Easy 2B - Pressfit - blank  

 

 

 

Modules for Photo-voltaic String and Multi-String Inverters

Tailor-made modules for photo-voltaic string and multi-string inverters. Optimised inverter efficiency and performance can be achieved. Fast and solder-less assembly is possible using the proven PressFIT technology. Read more about our modules for Photo-voltaic String and Multi-String Inverters

 

 


Reliability-data-button


Product Selection Guide

Title Size Date Version
22.2 MB 21 Feb 2017 00_00
3.5 MB 15 May 2017 01_00
2 MB 14 Mar 2014 01_00
1.9 MB 03 May 2013 01_00

Product Catalogue

Title Size Date Version
2.9 MB 12 May 2017 03_00

Product Brochure

Title Size Date Version
3.2 MB 15 May 2017 02_00

Product Brief

Title Size Date Version
110 KB 25 Sep 2017 01_00
338 KB 15 May 2017 02_00
466 KB 18 Apr 2016 01_00
785 KB 24 Mar 2013 01_00
202 KB 01 Dec 2012 01_00
776 KB 14 May 2012

Application Brochure

Title Size Date Version
340 KB 23 Oct 2015 01_00
242 KB 06 Sep 2017 01_00

Application Notes

Title Size Date Version
12.1 MB 13 Sep 2016 01_00
1.4 MB 25 Sep 2017 01_00
6.5 MB 12 Jul 2017 01_00
1.4 MB 16 Nov 2015 01_00
731 KB 24 Mar 2017 01_00
570 KB 31 Jul 2015 01_00
2.2 MB 19 Dec 2014 02_00
791 KB 16 Jun 2014 01_00
4.9 MB 16 Dec 2013

Editorials

Title Size Date Version
521 KB 04 Nov 2015 01_00

Article

Title Size Date Version
471 KB 20 Oct 2016 01_00
289 KB 04 Jul 2017 01_00
235 KB 15 May 2017 01_00
1.7 MB 10 Aug 2016 01_00
772 KB 01 Oct 2016 01_00
540 KB 15 May 2017 01_00
117 KB 21 Jul 2016 01_00
460 KB 21 Jul 2016 01_00
530 KB 03 Dec 2015 01_00
1.6 MB 23 Jul 2015 01_00
145 KB 12 Mar 2015 01_00
1.4 MB 10 Sep 2014 01_00
376 KB 05 Sep 2014
339 KB 26 Sep 2012
1.6 MB 01 Sep 2012 01_00
516 KB 21 May 2012

Application Brief

Title Size Date Version
87 KB 11 Jul 2017 01_00

Presentations

Title Size Date Version
1,020 KB 11 May 2016 01_00

Whitepaper

Title Size Date Version
105 KB 07 May 2013 01_00
601 KB 01 Mar 2013 01_00
595 KB 20 Nov 2007

Evaluation Boards

Board Family Description Status
EVALPFC3-ICE3PCS02G Diode (Si, SiC), MOSFET, Power Controller (PWM, PFC) PFC CCM ICE3PCS02G for 300 W 400 V SMPS evaluation board with 85~265V AC universal input.
  • ICE3PCS02G
  • IDH04S60C
  • IPP60R199CP
active and preferred
EVAL_2K5W_CCM_4P_V2 Diode (Si, SiC), Gate Driver, MOSFET, Power Controller (PWM, PFC) 2500W CCM Power factor correction (PFC), 110/230 AC to 400 DC, >98% peak efficiency, 65/100 kHz, shows efficiency benefits due to usage of TO247-4
  • 1EDI60N12AF
  • ICE3PCS01G
  • ICE3RBR4765JZ
  • IDH16G65C5
  • IFX91041
  • IPZ60R040C7
coming soon
EVAL_800W_130PFC_C7 Diode (Si, SiC), Gate Driver, MOSFET, Power Controller (PWM, PFC) 800W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 97.8% peak efficiency, 130 kHz-high power density
  • 2EDN7524F
  • ICE2QR4780Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180C7
  • XMC1302-T038X200 AB
on request
EVAL_800W_PFC_C7_V2 Diode (Si, SiC), Gate Driver, Power Controller (PWM, PFC), MOSFET 800W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 97.8% peak efficiency, 130 kHz-high power density
  • 2EDN7524F
  • ICE2QR4780Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180C7
  • XMC1402-Q040X0128 AA
active and preferred
EVAL_3KW_DB_PFC_C7 Diode (Si, SiC), Gate Driver, Microcontroller, MOSFET Full IFX solution for a Bridgeless Dual Boost PFC for a 3kW Server/Telecom/Industrial SMPS
  • IPW65R045C7
  • 1EDI60N12AF
  • 2EDN7524F
  • ICE2QR2280
  • IDH16G65C5
  • IPZ65R045C7
  • TLF4949
  • XMC1300
coming soon
EVAL_800W_PSU_4P_C7 MOSFET, Gate Driver This 800W evaluation board is intended to be a form, fit and function testplatform for server applications to show operation of the 600V CoolMOS C7, 650V SiC Diode , Optimos 40V, Quasi Resonat Flyback (QR) and XMC 1400/4200 controller.The evaluation board is designed around the Infineon 600V CoolMOS 4-Pin device and the cost effective Optimos 40V Technology to show switching performance and power density design .
    active and preferred
    EVAL_800W_PFC_P7 Gate Driver, Microcontroller, MOSFET, Power Controller (PWM, PFC) The purpose of this demoboard is to demonstrate the performance of the latest 600V CoolMOS™ P7 (IPP60R180P7) Power MOSFET technology working at 65kHz in a CCM PFC boost converter along with EiceDRIVER™ ICs (2EDN7524F) and 650V CoolSiC™ Schottky Diode Generation 5 (IDH06G65C5) using analog control (ICE3PCS01G).
    • 2EDN7524F
    • ICE2QR2280Z
    • ICE3PCS01G
    • IDH06G65C5
    • IPP60R180P7
    active and preferred
    KIT_2K5W_CCM_TOLL MOSFET, Diode (Si, SiC), Gate Driver This TO-lead less (TOLL) adapter is special made in order to upgrade the EVAL_2.5KW_CCM_4PIN evaluation board for SMD devices in the PFC stage by just exchanging the heatsink with the already assembled devices on it. The C7 GOLD series (G7) for the first time brings together the benefits of the improved C7 GOLD 600V CoolMOS™ technology, 4 pin Kelvin Source capability and the improved thermal properties of the TOLL package to enable a possible SMD solution for high current applications.
    • CoolMOSTM -IPT60R028G7
    • CoolSICTM G5 - IDK12G65C5
    active and preferred
    EVAL 300W CCM PFC P6 Diode (Si, SiC), MOSFET, Power Controller (PWM, PFC) 300W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 98.5% peak efficiency
    • ICE3PCS01G
    • IDH02G65C5
    • IPP60R190P6
    active
    EVALPFC3-ICE3PCS03G Diode (Si, SiC), MOSFET, Power Controller (PWM, PFC) PFC CCM ICE3PCS03G for 300 W 400 V SMPS evaluation board with 85~265V AC universal input.
    • ICE3PCS02G
    • IDH04S60C
    • IPP60R199CP
    active and preferred

    PCB Design Data

    Title Size Date Version
    752 KB 05 Nov 2013 02_00
    470 KB 05 Nov 2013 02_00
    98 KB 05 Nov 2013 02_00
    624 KB 05 Nov 2013 02_00
    CoolSiCSchottkyDiodes_G6  

    eLearning CoolSiC™ Schottky diode 650V G6

    Unparalleled efficiency and price-performance - learn more about Infineon's CoolSiC™ Schottky diodes G6, their benefits and applications as well as the history and key differences.

    Video_CoolSiC_G6  

    CoolSiC™ Schottky diode 650V G6 - unparalleled efficiency and price performance

    The latest most price-performant generation of Infineon CoolSiC™ diode 650V G6 offers the best efficiency per dollar.

     

    Length: 4:26

     CoolSiC™ - Revolution to rely on  

    CoolSiC™ - Revolution to rely on

    Infineon CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary SiC technology with extensive system understanding, best-in-class packaging and manufacturing excellence, Infineon CoolSiC enables you to develop radical new product designs with best system cost-performance ratio.

     
    Length 2:25
    650V SiC thinQ™ Generation 5 Diodes - Advantages of Silicon Carbide and Market Positioning  

    CoolSiC™ Schottky diodes 650V G5 - advantages of Silicon Carbide and market positioning

     Introduction to the latest generation of Infineon's Silicon Carbide schottky diodes covering product positioning, application benefits and planned portfolio.

     
    Length 5:56
    650V SiC thinQ™ Generation 5 Diodes - Thin-Wafer, Efficiency and Portfolio  

    CoolSiC™ schottky diodes 650V G5 - thin-wafer, efficiency and portfolio

     Introduction to the latest generation of Infineon's Silicon Carbide schottky diodes covering product positioning, application benefits and planned portfolio.

     
    Length 3:39
    1200V SiC thinQ!™ Generation 5 Schottky Diodes  

    CoolSiC™ Schottky diodes 1200V G5

    Infineon’s CoolSiC™ schottky diode portfolio 1200V G5 offers designers of high power 3-phase applications new levels of efficiency and reliability.

     
    Length 4:43
    1200V SiC thinQ!™ Generation 5 Schottky Diode - Product Portfolio and Target Application  

    CoolSiC™ schottky diode 1200V G5 - product portfolio and target application

    Comparison of the forward voltage of Infineon's CoolSiC™ schottky diodes G5 and G2. Datasheet and measurement forward voltage values are used to plot how much G5 has improved compared to previous generations.

     
    Length 4:43

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