FF1MR12MM1H_B11 CoolSiC™ MOSFET dual module 1200 V

Overview

EconoDUAL™ 3 CoolSiC™ MOSFET halfbridge module 1200 V, 1.4 mΩ with enhanced generation 1, NTC and PressFIT contact technology. Also available with pre-applied Thermal Interface Material (FF1MR12MM1HP_B11) or with wave structure on the backside of the base plate for direct liquid cooling (FF1MR12MM1HW_B11).

Summary of Features

  • Low switching losses
  • Superior gate oxide reliability
  • Higher gate threshold voltage
  • Higher power output
  • Robust integrated body diode
  • High cosmic ray robustness
  • High speed switching module
  • Tvj op = 175°C overload
  • PressFIT pins
  • Screw power terminals
  • Integrated NTC temperature sensor
  • Isolated baseplate

Benefits

  • High switching frequency
  • Reduced volume and size
  • Reduction of system costs
  • High thermal efficiency
Diagrams
Training

Combining the EconoDUAL™ 3 package with silicon carbide technology, Infineon offers a unique approach that unlocks even more benefits, making it an excellent choice for many high-power applications. The EconoDUAL™ 3 is a medium power package that has revolutionized the industry for more than 15 years, meeting the demands for high-power density, compact design, and lower losses.

Support