DF4-19MR20W3M1HF_B11

Overview

2000 V, 60 A Boost EasyPACK™ 3B CoolSiC™ MOSFET Module

EasyPACK™ 3B CoolSiC™ MOSFET 2000 V 60 A Boost module with PressFit PIN and NTC.

Summary of Features

  • Best in Class packages with 12 mm height
  • 2 kV CoolSiC™ MOSFET with enhanced generation 1 trench technology
  • Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
  • Extended maximum gate-source voltages of +23 V and -10 V
  • Tvjop under overload condition up to 175°C
  • PressFIT pins

Benefits

  • Extended Easy family in 12 mm height with PressFIT
  • Pin technology enables platform-based design
  • High reliable package and production concept
  • Highest power density by lowest RDS
  • Reduction of drift caused by dynamic components
  • Supports full current operation at 1500 V DC by the sufficient over-voltage margin
  • A low FIT rate for cosmic ray induced fails
  • Best cost performance ratio with reduced system costs
product picture for CoolSiC MOSFET Easy 3B Modules
Diagrams
Training
Introduction to SiC reliability

This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.

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