IMDQ65R010M2H CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 10 mΩ
Overview
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
Summary of Features
- Excellent figures-of-merit (FOMs)
- High robustness and overall quality
- Flexible driving voltage range
- Support for unipolar driving (VGS,off=0)
- Lower thermal resistance
- Improved package interconnect with .XT
- Top-side cooling
Benefits
- Enables BOM savings
- Maximizes the system performance per $
- Highest reliability
- Enables top efficiency and power density
- Simplifies assembly and cooling
- Water cooling "ready"
- Allows designs without fan or heatsink
- Lower stray inductances
- Better gate control
Support
