IMCQ120R034M2H CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Overview
CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
Summary of Features
- VDSS = 1200 V @Tvj = 25°C
- IDDC = 45 A @TC = 100°C
- RDS(on) = 34 mΩ @VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage
- Robust against parasitic turn on
- Robust body diode for hard commutation
- .XT interconnection technology
Benefits
- Outstanding thermal performance
- Increases energy efficiency
- Higher power density
- More compact and easier designs
- Lower TCO cost or BOM cost
Diagrams
Training
Top-side cooling in a nutshell: CoolSiC™ – Q-DPAK
This training provides an overview of Infineon's Q-DPAK top-side cooling portfolio, including design considerations and thermal interface options.
Support
