IMBG65R075M2H
Overview
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package, 75 mΩ
The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
Summary of Features
- Excellent figures of merit (FOMs)
- Best in class RDS(on)
- Outstanding robustness
- Flexible driving voltage range
- Improved package interconnect with .XT
- Tj,max=175°C
- Kelvin pin
Benefits
- Enables BOM savings
- Maximizes the system performance per $
- Highest reliability and longer lifetime
- Enables top efficiency and power density
- Small footprint to more power density
- Most compact daughter card design
- Fully leverages SiC in a small footprint
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