650 V Silicon Carbide MOSFETs

Infineon CoolSiC™ Silicon Carbide MOSFET 650 V discretes were especially developed for applications such as Server SMPS, ESS, Solar inverters, EV charging, UPS and other Industrial SMPS.

Infineon's CoolSiC™ Silicon Carbide MOSFET 650 V discrete devices exeptional robustness to parasitic turn-on and mature gate oxide technology enables outstanding perfomance in hard-switching topologies like Totem Pole PFC, Vienna Rectifier and ANPC. Furthermore the substantial reduction in Output Capacitance (C_oss) in G2 allows operation at higher switching frequency in soft switching topologies, such as CLLC, DAB and LLC. As a result, it is made possible to achieve power density up to 100W/in³ and overall efficieny of approximately 97.5%  at full load  for Server and AI PSU ranging from 3 kW to 12 kW, all while minimizing the bill of materials (BOM).

Artificial intelligence (AI) applications are fast-developing and require even higher power than other traditional data center applications. Infineon CoolSiC™, together with the CoolMOS™ high  R_DS granularity and vast package offering provides additional degrees of freedom to meet the stringent requirment of AI Servers.

Check out infineon reference designs and evaluation board for efficient PSU design using CoolSIC™ 650 V Discrete MOSFETs:

• REF_3K3W_HFHD_PSU
• REF_1KW_PSU_5G_SIC
• EVAL_3K3W_TP_PFC_SIC2

Besides TO247, CoolSiC™ 650 V MOSFET features top-side cooled (TSC) packages available in JEDEC registered QDPAK and TOLT. TSC enables the optimization of the thermal (ie. cooling stack) and electrical path (i.e. power loop inductance), while keeping a small form factor. Moreover TSC enable scalability and platform designs with automatic assembly and optimize cost. On the other hand, TOLL is suitable for PSU using a daughter card approach. ThinTOLL has the smallest form factor in the portfolio, which enables high power density design.

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Get an insight into the top side cooling packages market!

G2 offers comprehensive portfolio with new package additions and the lowerst 7 mOhm. It has also further improves price/performance of CoolSIC™ MOSFETs.

• Leading trench technology with superior gate oxide reliability
• Best immunity against unwanted turn-on effects
• Avalanche capability
• Enlarged driving voltage range (-7 V to +23 V static) in G2
• .XT Interconnect package technology