400 V Silicon Carbide MOSFETs

Infineon CoolSiC™ Silicon Carbide MOSFET 400 V discretes were especially developed for applications such as AI Server power supplies, Industrial and medical power suppliers, Audio, and Solar to offer cost / performance alternative to 650 V discrete MOSFETs. For power conversion up to 600 V_{DC_LINK} voltage in 2-level and 3-level topologies where the best price / performance ratio is needed.

CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ  to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort.

More about CoolSiC MOSFETS in discrete housings

• V_(BR)DSS up to 400 V
• On-resistance from 11 mΩ to 45 mΩ
• TOLL and D²PAK 7-pin packages
• low R_DS(on) temperature coefficient
• low Q_gd, Q_oss, Q_fr, E_oss
• High slew rate control & Coss linearity
• Easy unipolar gate driving
• Gate threshold voltage, V_GS(th) = 4.5 V
• 100% avalanche tested