400 V Silicon Carbide MOSFETs
400 V CoolSiC™ MOSFETs with on-resistance ratings from 11 mΩ up to 45 mΩ
Infineon 400 V CoolSiC™ Silicon Carbide MOSFET discretes were especially developed for applications such as AI Server power supplies, Industrial and medical power suppliers, Audio, and Solar to offer cost / performance alternative to 650 V discrete MOSFETs. For power conversion up to 600 VDC_LINK voltage in 2-level and 3-level topologies where the best price / performance ratio is needed.
Discrete CoolSiC™ MOSFET
CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort.
Key features
- V(BR)DSS up to 400 V
- On-resistance from 11 mΩ to 45 mΩ
- TOLL and D²PAK 7-pin packages
- low RDS(on) temperature coefficient
- low Qgd, Qoss, Qfr, Eoss
- High slew rate control & Coss linearity
- Easy unipolar gate driving
- Gate threshold voltage, VGS(th) = 4.5 V
- 100% avalanche tested
This video highlights the benefits of CoolSiC™, as seen through the eyes of our customers. Featuring testimonials from alpitronic, Tritium, Lite-On, Siemens Mobility, and Fronius, we see how SiC is driving innovation in energy generation, storage, and consumption.
This video provides valuable insights into the advantages of WBG (SiC & GaN) technology and its potential impact on the future of renewable energy, especially solar and energy storage systems.
CoolSiC™ MOSFET Webinars
The switching performance in particular is influenced by the chip's inherent properties, the device's operating conditions and the external circuitry. Optimizing operating conditions and circuitry can significantly improve the device performance in an application.
Circuit designers benefit from SPICE compact models that they can use in computer simulation to understand, troubleshoot and optimize the static and dynamic device behavior of applications through virtual prototyping.
This training explains the characteristics and use cases of simulation models offered by Infineon for CoolSiC™ MOSFETs, what to use them for and how to use them effectively.
This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.
Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.
CoolSiC™ MOSFET Microlearnings
Discover the benefits and challenges associated with connecting SiC power MOSFETs in parallel
By the end of this training, you will be familiar with CoolSiC™ MOSFET 1200 V M1H technology for Easy modules and with Infineon ever-expanding Easy module portfolio in the area of wide band gap material and know about the key features and benefits that are coming along with our latest M1H 1200 V series.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
- Distinguish the features and benefits of Infineon’s CoolSiC™ solutions in target applications and identify Infineon’s fully scalable CoolSiC™ portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications
Infineon offers trusted expertise in all 3 main power semiconductor technologies. Check out how to position them in AC-DC applications!
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