ISC010N06NM5
OptiMOS™ 5 Single N-Channel Power MOSFET 60 V, 1.05 mΩ, 330 A in a SSO8 package
Infineon’s OptiMOS™ 5 Power MOSFET 60V in SuperSO8 package (ISC010N06NM5) offers low on-state resistance RDS(on) at 25˚C and 175˚C, and high continuous current (up to 330 A). Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Summary of Features
- Lowest RDS(on) at 25˚C
- Low RthJC
- Low reverse recovery charge (Qrr)
- High operating temperature rating to 175°C
Benefits
- Lower conduction losses, higher power density and efficiency
- Less paralleling for system cost reduction
- Reduced overshoot
- Excellent thermal behavior
Potential Applications
- Telecom
- Server
- Power tools
- Low voltage drives
- Class D audio, Solar micro inverter, etc.
