IRF7910

Overview

Benefits

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100KHz
  • Industry standard surface-mount power package
  • Capable of being wave-soldered

12V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

Benefits

  • RoHS Compliant
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
  • Dual N-Channel MOSFET
Quality

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Support