IQE008N03LM5CGSC
Overview
OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package
The IQE008N03LM5CGSC is part of the Source-Down family with RDS(on) of 0.85 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside the components.
It offers increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than the overmolded package, and is available in Standard and Center-Gate footprints.
Summary of Features
- Major reduction in RDS(on) by up to 30%
- Improved RthJC compared to PQFN packages
- Standard & Center-gate footprints
- New, optimized layout possibilities
Benefits
- High power density and performance
- Superior thermal performance
- Efficient layout for space use
- Simplified MOSFET parallelization
- Improved PCB losses
- Reduced parasitics
Potential Applications
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