IQDH45N04LM6

Overview

OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on).

The power MOSFET IQDH45N04LM6 comes in a PQFN 5x6 Source-Down package. The part offers a very low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a lot of end applications like battery-powered tools, SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.

Summary of Features

  • Cutting edge 40 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio
  • Standard-Gate footprint

Benefits

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Improved thermal performance
  • Easy thermal management
  • Best switching performance
  • Industry-standard package

Potential Applications

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