IPP175N20NM6

Overview

OptiMOS™ 6 power MOSFET 200 V normal level in TO-220 package

IPP175N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy IR MOSFET products.

The OptiMOS™ 6 200 V technology was designed to fullfill the requirements of a wide range of applications: from static swiching to high frequency in hard and soft switching applications.

Summary of Features

  • Industries lowest RDS(on) in 200 V
  • Industries lowest Qrr in 200 V

Compared to previous 200 V technology

  • Up to 42% lower RDS(on)
  • Up to 89% lower Qrr(typ)
  • 36% lower FOMg
  • More than 3 times softer diode
  • Improved capacitance linearity
  • Improved SOA
  • Tight Vgs(th) spread of +/-750 mV
  • High avalanche ruggedness
  • Max Tj of 175°C and MSL1

Benefits

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Enhanced robustness
  • Improved system reliability
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