IPP082N10NF2S
Overview
StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 8.2 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Compared to the previous technology the IPP082N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
Summary of Features
- Broad availability from distribution partners
- Excellent price/performance ratio
- Ideal for high- and low-switching frequency
- Industry standard footprint through-hole package
- High current rating
- Capable of wave-soldering
Benefits
- Multi-vendor compatibility
- Right-fit products
- Supports a wide variety of applications
- Standard pinout allows for drop-in replacement
- Increased current carrying capability
- Ease of manufacturing
Potential Applications
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