IPD055N08NF2S

Overview

StrongIRFET™ 2 single N-channel power MOSFET 80 V in DPAK

Infineon's StrongIRFET™ 2  power MOSFET 80 V features low RDS(on) of 5.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD055N08NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low-switching frequency
  • Industry standard footprint through-hole package
  • High current rating
  • Capable of wave-soldering

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing

Potential Applications

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