OptiMOS™ n-channel power MOSFET 150V - Bare Die
Infineon’s OptiMOS™ 5 power MOSFET 150V technology offers a breakthrough reduction in RDS(on) (up to 25% compared to the next best alternative in SuperSO8) and Qrr without compromising FOMgd and FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse-recovery charge (lowest Qrr in SuperSO8 = 26nC) increases commutation ruggedness.
OptiMOS™ 5 power MOSFETs 150V are particularly suitable for low-voltage drives such as forklift and e-scooter, as well as telecom and solar applications. Optimized for synchronous rectification, these products are ideal for high frequency switching applications. High system efficiency is now enabled through reduced switching and conduction losses as well as increased power density. Consequently, the need for paralleling is reduced and end products are made more rugged, leading to overall system cost reduction.
In case parallelization is required, OptiMOS™ 5 offers best preconditions with an improved threshold voltage spread compared to previous OptiMOS™ generations.
IPC331N15NM5R was developed with the focus on module integration, specifically for modules which use MOSFETs in parallel. A monolithically integrated gate resistor enables direct interconnection of gate terminals of all the MOSFETs connected in parallel, sparing the customer the usage additional discrete resistors within the module itself. Binning for RG int possible upon request.
Summary of Features
- Monolithically integrated gate resistor optimized for applications in modules
- Ultralow recovery charge Qrr
- Ultralow output capacitance Coss
- RDS(on) reduction with respect to previous generation
- Highest system efficiency
- Reduced switching and conduction losses
- Less paralleling required
- Increased power density
- Lower voltage overshoot
- Easy gate interconnection on module level for parallel MOSFETs