TO-Leadless

Overview

600V and 650V CoolMOS™ C7 Gold superjunction MOSFET in TO-Leadless (G7) - the perfect balance of high efficiency and ease-of-use

The combination of improved 650V CoolMOS™ C7 and 600V CoolMOS™ C7 superjunction (SJ) MOSFET technology plus the low parasitic inductance from both the package and 4pin Kelvin source option, and the improved thermal performance of the TOLL package all add together to enable for the first time the possibility of using an surface mount (or SMD) solution in mid to high power boost or power factor correction circuits (PFC).

This leads to customer benefits in both power density and manufacturing cost reduction all of with high quality and an easy to use part. In addition to being suitable for hard switching topologies, the 600V CoolMOS™ G7 SJ MOSFET also gives excellent performance in resonant topologies such as LLC.

Products
Details

Features

600V CoolMOS™ G7:

  • Best-in-class figure of merit: RDS(on) x Q g and 
    RDS(on) x E oss
  • World‘s lowest RDS(on)/package

TO-Leadless package:

  • Space reduction versus D²PAK and TO-220
  • MSL1 compliant, wave and reflow solderable
  • Visual inspection due to grooved leads
  • 4 pin option for Kelvin source connection, low parasitic inductance
  • Thermal improvement over D²PAK and similar to TO-220

Benefits

600V CoolMOS™ G7:

  • Higher system efficiency by lower switching losses
  • Improved performance and power density

TO-Leadless package:

  • Improved power density
  • High quality and ease-of-use
  • Improved manufacturing
  • Improved efficiency and ease of use
  • Can be used in higher current applications

Infineon already has the best R DS(on) in D²PAK. Now improved again with CoolMOS™ G7 and TO-Leadless package with smaller footprint.

TO-Leadless power density - package and RDS(on)

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Related documents

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Infineon button CoolMOS Selection Guide
Simulation
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