600V CoolMOS™ G7
Infineon Technologies introduces the 600V CoolMOS™ C7 Gold (G7) technology in surface mount device (SMD) with bottom-side cooling TO-Leadless (TOLL). The 600V CoolMOS™ G7 family is now available also in Infineon’s latest top-side cooling package innovation, the Double DPAK (DDPAK) package.
The CoolMOS™ G7 for the first time brings together the benefits of the improved 600V CoolMOS™ C7 technology, 4-pin Kelvin source capability and the improved thermal properties of the TO-Leadless and DDPAK packages to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for 600V CoolMOS™ G7 also for resonant circuits such as high end LLC.
The most notable customer benefits are a higher efficiency due to the improved CoolMOS™ G7 technology, faster switching due to the package low parasitic source inductance and the 4-pin Kelvin source concept, improved power density due to low RDS(on) in small footprint and production cost reduction through quicker assembly times by moving to SMD.
600V CoolMOS™ G7 power MOSFETs - benefits to the customer
- Higher efficiency due to the improved CoolMOS™ G7 technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept
- Improved power density due to low RDS(on) in small footprint by either replacing TO packages (height restrictions) or paralleling SMD packages due to thermal or RDS(on) requirements
- Production cost reduction by moving to SMD through quicker assembly times
R DS(on)(max) [mΩ]
|Q G (typ) [nC]||C oss (typ) [pF]|
|Competitor A 600V||D²PAK||99||100||156|
|600V CoolMOS™ C7 Gold (G7)||TOLL||102||34||27|
|Comparison||30% footprint reduction||Similar RDS(on) for comparison||66% lower than competitor||83% lower than competitor|
R DS(on)(max) [mΩ]
|Source inductance [nH]||Kelvin source feature|
|Comparison||30% footprint reduction||68% lower RDS(on)||80% lower inductance||Benefits in Kelvin source for efficiency and ease-of-use|