AUIRLR3105 55V, N-Ch, 37 mΩ max, Automotive MOSFET, DPAK, Gen 7.5

Overview

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Benefits

  • Advanced Planar Technology
  • Logic-Level Gate Drive
  • Dynamic dv/dt Rating
  • Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS Compliant
  • Automotive Qualified
Training

Getting started with automotive MOSFETs

Gettings tarted with mosfets
  • Know more about Infineon’s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications
  • Understand why and how Infineon is strengthening its position in the 40 V MOSFET market, and be familiar with Infineon’s newest 60 V MOSFETs

Going above and beyond. How Infineon produces the highest quality automotive MOSFETs

Goingaboveandbeyond
  • Get to know Infineon’s Zero Defect approach and how Infineon goes beyond the requirements when it comes to automotive MOSFET qualification
  • Be familiar with both dimensions of Infineon’s Zero Defect approach, which aim at extending product lifetimes and reducing the number of random failures, by exploring each one in detail
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