600V CoolMOS™ C7

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Our flagship CoolMOS™ technology for hard and soft switching topologies

Header_600V_CoolMOS_C7

 

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The new 600V CoolMOS™ C7 series from Infineon offers approximately 50% reduction in turn-off losses (E oss) compared to the CoolMOS™ CP. It offers an outstanding level of performance in PFC, TTF and other hard-switching topologies and extends the use of silicon MOSFETs to the next generation of highest efficiency power designs.

 

CoolMOS™ C7 offers best-in-class performance in PFC and LLC topologies

CoolMOS™ C7 offers gains of 0.3% to 0.7% in PFC stages versus its predecessor CoolMOS™ CP. Further efficiency gains can be realized in highest power designs with the TO-247 4pin package. On average, CoolMOS™ C7 with TO-247 4pin package boosts efficiency by 0.4%. 

 

Customer benefits –higher efficiency or BOM cost reduction

  • In efficiency driven applications the reduced switching losses boost efficiency and translate into lower thermal losses and lower power consumption. Ideally, the CoolMOS™ C7 efficiency is further boosted by using a package with a Kelvin source (TO-247 4pin or ThinPAK 8x8).
  • BOM cost driven applications can use the efficiency gains for increasing the switching frequency, which allows to reduce the cost of the magnetic components by up to 35%

 

Key features Key benefits
  • Reduced switching loss parameters such as Q G, C OSS, enabling higher switching frequency
  • 50% E oss reduction compared to older CoolMOS™ CP technology
  • Lowest R DS(on) * A in the world (<1Ω.mm²)
  • Suitable for high-end resonant topologies
  • Doubling the switching frequency will reduce the size and cost of magnetic components (e.g. 65kHz – 130kHz)
  • Increased efficiency in hard switching topologies such as PFC and TTF
  • Smaller packages for same R DS(on) lead to power density benefits
  • Suitable for high-end LLC circuits

New best-in-class package options

The 600V CoolMOS™ C7 offers new best-in-class R DS(on) values in TO-220/TO-262/TO-263 packages – a 36% lower on-state resistance versus to the nearest competitor is realized. The smaller package offers a 50% cross section reduction compared to TO-247, opening ways toward higher power density. Also in TO-247 package, a new record in form of a 17mΩ die is achieved.

600V CoolMOS™ C7 comes with the lowest R DS(on) in TO-220/TO-262/TO-263 Customer benefit – space savings
600V-CoolMOS-C7-lowest-rdson 600V-CoolMOS-C7-spacesavings

 

Increasing switching frequencies without penalty

In designs based on 600V CoolMOS™ C7 switching frequencies can be increased by up to two times with very limited penalty. This is possible due to the 50% reduction of turn-off losses in CoolMOS™ C7. Switching losses in a 600V CoolMOS™ C7 based design at 130kHz are lower than in a CoolMOS™ CP based design at 65kHz (see figure below). A further loss reduction is achieved when the CoolMOS™ C7 is used in a package with Kelvin source (e.g. TO-247 4pin or ThinPAK 8x8): the higher full load efficiency provided by the 4pin package can be used to increase R DS(on) by on step (e.g. from 40 to 70mOhm). As a result, light load switching losses decrease even further.

 

  600V-CoolMOS-C7-switchingfrequencies

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Product portfolio 600V CoolMOS™ C7

Click on a product type to learn more, download datasheet and order 

R DS(on)max TO-247 TO-247 4pin DPAK D 2PAK
180/185mΩ IPW60R180C7   IPD60R180C7 IPB60R180C7
120/125mΩ IPW60R120C7     IPB60R120C7
99/104mΩ IPW60R099C7 IPZ60R099C7   IPB60R099C7
60/65mΩ IPW60R060C7 IPZ60R060C7   IPB60R060C7
40mΩ IPW60R040C7* IPZ60R040C7**   IPB60R040C7
17mΩ IPW60R017C7 IPZ60R017C7    

*Evaluation board available:  3kW dual LLC evaluation board

**Evaluation board available:  2.5kW CCM PFC 4pin

 

R DS(on)max TO-220 TO-220 FullPAK ThinPAK 8x8
180/185mΩ IPP60R180C7* IPA60R180C7 IPL60R185C7
120/125mΩ IPP60R120C7 IPA60R120C7 IPL60R125C7
99/104mΩ IPP60R099C7 IPA60R099C7 IPL60R104C7
60/65mΩ IPP60R060C7 IPA60R060C7 IPL60R065C7
40mΩ IPP60R040C7**    

*Evaluation boards available: 

**Evaluation board available:  3kW dual LLC evaluation board

NEW! 650V CoolMOS™ C7 Gold in TO-Leadless package

650V CoolMOS™ C7

Perfect match!

EiceDRIVER™ 1EDN and 2EDN gate driver for MOSFETs


Product Brief

Title Size Date Version
382 KB 19 Jan 2017 01_00
409 KB 03 Jul 2015 01_00

Product Brochure

Title Size Date Version
2.7 MB 27 Apr 2017 02_00
1.5 MB 09 Jun 2016 06_16

Product Selection Guide

Title Size Date Version
310 KB 10 Oct 2016 01_00
1.9 MB 03 May 2013 01_00
211 KB 10 Oct 2016 01_00
22.2 MB 21 Feb 2017 00_00
264 KB 10 Oct 2016 01_00
521 KB 10 Oct 2016 01_00
298 KB 08 Sep 2016 01_00
3.5 MB 15 May 2017 01_00

Application Notes

Title Size Date Version
6.5 MB 12 Jul 2017 01_00
1.6 MB 03 Jun 2015 01_00
4.3 MB 07 Nov 2016 01_00
2.1 MB 19 May 2015 01_00
12.1 MB 13 Sep 2016 01_00
2 MB 01 Dec 2016 01_00
1.6 MB 30 Mar 2017 01_00
5 MB 26 Jun 2017 01_00
1.4 MB 16 Nov 2015 01_00
2.5 MB 14 Jan 2016 01_00
1 MB 01 Nov 2012 01_00
1.1 MB 30 Jan 2015 01_00
880 KB 14 Aug 2014 01_00
701 KB 30 Nov 2015 01_00
7 MB 25 Jun 2015 01_00
2.2 MB 19 Dec 2014 02_00
1.6 MB 23 Apr 2008 01_00
993 KB 01 Apr 2008 01_00

Application Brochure

Title Size Date Version
575 KB 09 May 2017 01_00

Article

Title Size Date Version
1.3 MB 12 Apr 2017 01_00
1.7 MB 10 Jun 2015 01_00
1.5 MB 21 Sep 2015 01_00

Additional Product Information

Title Size Date Version
6.3 MB 24 Oct 2008
162 KB 19 May 2015 01_00
40 KB 21 Jun 2016 01_00

Application Brief

Title Size Date Version
87 KB 11 Jul 2017 01_00

Evaluation Boards

Board Family Description Status
EVAL_2K5W_CCM_4P_V2 Diode (Si, SiC), Gate Driver, MOSFET, Power Controller (PWM, PFC) 2500W CCM Power factor correction (PFC), 110/230 AC to 400 DC, >98% peak efficiency, 65/100 kHz, shows efficiency benefits due to usage of TO247-4
  • 1EDI60N12AF
  • ICE3PCS01G
  • ICE3RBR4765JZ
  • IDH16G65C5
  • IFX91041
  • IPZ60R040C7
coming soon
EVAL_800W_130PFC_C7 Diode (Si, SiC), Gate Driver, MOSFET, Power Controller (PWM, PFC) 800W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 97.8% peak efficiency, 130 kHz-high power density
  • 2EDN7524F
  • ICE2QR4780Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180C7
  • XMC1302-T038X200 AB
on request
EVAL_800W_PFC_C7_V2 Diode (Si, SiC), Gate Driver, Power Controller (PWM, PFC), MOSFET 800W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 97.8% peak efficiency, 130 kHz-high power density
  • 2EDN7524F
  • ICE2QR4780Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180C7
  • XMC1402-Q040X0128 AA
active and preferred
EVAL_600W_12V_LLC_C7 Gate Driver, MOSFET, Power Controller (PWM, PFC) 600W DCDC/LLC stage, 400V/12V DC, 97.8% peak efficiency
  • IPP60R180C7, BSC010N04LS, 2EDL05N06PF, ICE2HS01G, ICE2QR2280Z, 2EDN7524F
active and preferred
EVAL_600W_12V_LLC_P7 Gate Driver, Microcontroller, MOSFET
  • 2EDL05N06PF
  • 2EDN7524
  • BSC010N04LS
  • ICE2QR2280Z
  • IPP60R180P7
  • XMC4200
active and preferred
EVAL_800W_PFC_P7 Gate Driver, Microcontroller, MOSFET, Power Controller (PWM, PFC) The purpose of this demoboard is to demonstrate the performance of the latest 600V CoolMOS™ P7 (IPP60R180P7) Power MOSFET technology working at 130kHz in a CCM PFC boost converter along with EiceDRIVER™ ICs (2EDN7524F) and 650V CoolSiC™ Schottky Diode Generation 5 (IDH06G65C5) using analog control (ICE3PCS01G).
  • 2EDN7524F
  • ICE2QR2280Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180P7
active and preferred
KIT_600W_LLC_DI_CTRL MOSFET, Gate Driver, Microcontroller Adapter-Kit to replace the analog control card by a digital version
  • Silicon transistor (BC846PN)
  • Voltage regulator (IFX91041EJV33)
  • XMC™ microcontroller (XMC4200-Q48K256AB)
active and preferred
EVAL_800W_PSU_4P_C7 MOSFET, Gate Driver This 800W evaluation board is intended to be a form, fit and function testplatform for server applications to show operation of the 600V CoolMOS C7, 650V SiC Diode , Optimos 40V, Quasi Resonat Flyback (QR) and XMC 1400/4200 controller.The evaluation board is designed around the Infineon 600V CoolMOS 4-Pin device and the cost effective Optimos 40V Technology to show switching performance and power density design .
    active and preferred
    EVAL_3KW_2LLC_C7_20 Gate Driver, Microcontroller, MOSFET 3.0kW Dual LLC Evaluation Board
    • 1EDI60N12AF
    • 2EDN7524R
    • 2N7002
    • BAS 52-02V BAT165
    • BSC093N15NS5
    • BSS316N
    • ICE2QR2280Z
    • IFX1763XEJ V33
    • IFX1763XEJ V50
    • IPP60R040C7
    • XMC4400-F64K512AB
    active and preferred
    KIT_2K5W_CCM_TOLL MOSFET, Diode (Si, SiC) This TO-lead less (TOLL) adapter is special made in order to upgrade the EVAL_2.5KW_CCM_4PIN evaluation board for SMD devices in the PFC stage by just exchanging the heatsink with the already assembled devices on it. The C7 GOLD series (G7) for the first time brings together the benefits of the improved C7 GOLD 600V CoolMOS™ technology, 4 pin Kelvin Source capability and the improved thermal properties of the TOLL package to enable a possible SMD solution for high current applications.
    • CoolMOSTM -IPT60R028G7
    • CoolSICTM G5 - IDK12G65C5
    active and preferred

    Simulation Models

    Title Size Date Version
    7 KB 30 Sep 2015 01_00
    600V_CoolMOS_C7_Technical_eLearning 

    eLearning 600V CoolMOS™ C7 series

    In this eLearning you get an explanation of the 600V CoolMOS™ C7 product family and its technical background. After this trainign you will understand the impact from efficiency to temperature, know the losses contribution of the MOSFET in PFC, understand and know the different switching losses mechanism, understand Q oss and E oss and its impact to hard- and soft- switching, know the limitation of the parasitic source inductance and understand the 4pin functionality with its benefit in hard switching applications.

     
    Length 13:07
    Introducing the New 600 V CoolMOS™ C7 Series Efficiency Optimized Applications

    Introducing the 600V CoolMOS™ C7 series - efficiency optimized applications

    The new 600 V CoolMOS™ C7 series from Infineon brings new levels of efficiency to hard switching topologies (PFC/TTF) and unlike its 650 V predecessor also in high performance resonant topologies (LLC). This video covers power density and supply security.

     
    Length 4:02
    Introducing the New 600 V CoolMOS™ C7 Series Cost Form Factor Driven Applications

    Introducing the 600V CoolMOS™ C7 series - cost form factor driven applications

    The 600 V CoolMOS™ C7 series from Infineon brings new levels of efficiency to hard switching topologies (PFC/TTF) and unlike its 650 V predecessor also in high performance resonant topologies (LLC). This video covers power density and supply security.

     
    Length 4:41
    Introducing the New 600 V CoolMOS™ C7 Series Introduction

    Introducing the 600V CoolMOS™ C7 series - introduction

    The 600 V CoolMOS™ C7 series from Infineon brings new levels of efficiency to hard switching topologies (PFC/TTF) and unlike its 650 V predecessor also in high performance resonant topologies (LLC). This video covers power density and supply security.

     
    Length 3:00
    Introducing the New 600 V CoolMOS™ C7 Series Power Density and Supply Security

    Introducing the 600V CoolMOS™ C7 series - power density and supply security

    The 600 V CoolMOS™ C7 series from Infineon brings new levels of efficiency to hard switching topologies (PFC/TTF) and unlike its 650 V predecessor also in high performance resonant topologies (LLC). This video covers power density and supply security.

     
    Length 2:17
    Introducing the New 600 V CoolMOS™ C7 Series System Solution, Demoboards and Product Portfolio

    Introducing the 600V CoolMOS™ C7 series - system solution, demoboards and product portfolio

    The 600 V CoolMOS™ C7 series from Infineon brings new levels of efficiency to hard switching topologies (PFC/TTF) and unlike its 650 V predecessor also in high performance resonant topologies (LLC). This video covers the general Information.

     
    Length 4:32

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