IPW60R037P7

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Optimized power MOSFETs merging high energy efficiency with ease-of-use


Description:

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features:

Efficiency

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

  • Integrated ESD diode from 180mN and above R DS(on)s
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits:

Efficiency

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Target Applications:

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom 
  • Lighting

2EDN-EiceDRIVER

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Parametric IPW60R037P7
Budgetary Price €€/1k   4.63 
Package   TO-247
VDS  max 600.0V
RDS (on)  max 37.0mΩ
Polarity   N
ID  max 76.0A
Ptot  max 255.0W
IDpuls  max 280.0A
VGS(th)  min  max 3.0V  4.0V
QG   121.0nC 
Rth   0.49K/W 
RthJC  max 0.49K/W
RthJA  max 62.0K/W
Operating Temperature  min  max -55.0°C  150.0°C
Pin Count   3.0Pins 
Mounting   THT
Qgd   37.0nC 

Data Sheet

Title Size Date Version
1.2 MB 20 Feb 2017 02_01

Product Brochure

Title Size Date Version
1.5 MB 09 Jun 2016 06_16
2.7 MB 27 Apr 2017 02_00

Application Notes

Title Size Date Version
880 KB 14 Aug 2014 01_00
3.2 MB 28 Mar 2017 01_00
1 MB 01 Nov 2012 01_00
2.9 MB 04 Jul 2017 01_01
3.9 MB 05 Apr 2017 01_00
701 KB 30 Nov 2015 01_00
7 MB 25 Jun 2015 01_00
2 MB 01 Dec 2016 01_00

Product Brief

Title Size Date Version
483 KB 14 Jun 2017 01_00

Application Brochure

Title Size Date Version
1.5 MB 27 Jun 2017 02_00
199 KB 18 Sep 2017 02_00

Product Selection Guide

Title Size Date Version
310 KB 10 Oct 2016 01_00
264 KB 10 Oct 2016 01_00
22.2 MB 21 Feb 2017 00_00
521 KB 10 Oct 2016 01_00
3.5 MB 15 May 2017 01_00
298 KB 08 Sep 2016 01_00
211 KB 10 Oct 2016 01_00
Sales Product Name IPW60R037P7
OPN IPW60R037P7XKSA1
Product Status active and preferred
Order online Buy online
Package Name PG-TO247-3
Completely lead free yes
Halogen free yes
RoHS compliant yes
Packing Size 240
Packing Type TUBE
Moisture Level NA

Evaluation Boards

Board Family Description Status
EVAL_3KW_2LLC_P7_47 Gate Driver, Microcontroller, MOSFET Full IFX solution for the HV DCDC stage of a 3KW Telecom/industrial SMPS
  • 1EDI60N12AF
  • 2EDN7524
  • BSC093N15NS5
  • ICE2QR2280Z
  • IPW60R037P7
  • XMC4400
active and preferred

Simulation Models

Title Size Date Version
675 KB 22 Aug 2017 01_00
600 V CoolMOS™ P7 – Infineon’s most well balanced High Voltage MOSFET technology

600 V CoolMOS™ P7 – Infineon’s most well balanced High Voltage MOSFET technology

Introduction of Infineon’s latest 600 V CoolMOS™ P7 combining highest efficiency with excellent ease-of-use and overview about target applications, features and benefits.
Length 5:43

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